December 6, 1995

Dear Colleagues,

CDF NOte #3408 is available for reading.


                                              CDF/DOC/SEC_VTX/PUBLIC/3408 


                    Bulk Radiation Damage in Silicon Detectors
                            and Implications for SVX II


        John A.J. Matthews, Peter Berdusis, Mark Frautschi, Joachim Schuler 
                      New Mexico Center for Particle Physics
                            University of New Mexico 

                Nicola Bacchetta, Dario Bisello, Andrea Giraldo
                     Istituto Nazionale di Fisica Nucleare
                             Universita di Padova

                                Lenny Spiegel
                    Fermi National Accelerator Laboratory 

                               November 1, 1995

                                   ABSTRACT


 Bulk radiation damage to high resistivity n-type silicon detectors was
 studied with incident pi+ (190 MeV) and protons (500 MeV, 647 MeV or 800
 MeV).   Silicon bulk damage constants were extracted based on proton 
 fluences up to 8 x 10**13/cm**2 and for pi+ fluences up to 3 x 10**13/cm**2.
 Although the measured damage constants for pi+ and for proton irradiations 
 were different, a simple empirical relationship was proposed to relate 
 the pi+ and proton radiation damage data.  In addition:
 a) Activation constants for reverse annealing were determined at four 
    temperatures between 0-degrees C and 50-degrees C.
 b) 8 silicon detectors were exposed to a second proton fluence of 
    3 x 10**13/cm**2.   The resulting changes in the effective dopant 
    concentration were consistent with a model where the bulk radiation 
    effects were purely additive. 
 The measured silicon damage coefficients were used to provide detailed
 predictions of the depletion voltage for SVX II during the course of 
 Tevatron Run II.
 
Posted to CDF$PUB:CDF3408_BULK_DAM_CDF3408.PS
Posted by FNALH::JOHNM